xoh|lw|ฆ@cbFor SiN wafer, GaN wafer, or transparent wafer.
New designed detection units which are cross
setting with dual 355nm (UV) laser. The dual detector contributes enhanced detection
for a slight scratch generated directional light scattered compared with
conventional particle inspection system. And also, 355nm laser is effective for isolated
detection of SiC surface only. Inspection time is within 5min for 4inch SiC wafer.
@@@@dual laser units@@@@@@@@@@@@@@@@@@@Inspection result image
Transparent wafer, silicon wafer or LT wafer can be
measured by YPI-MX-ฦDC. Maximum sensitivity is 0.1สm.
MAP result for LT wafer
Approx 2minutes inspection time for 4inch LT wafer.
Rotation or XY scanning with dual laser units
Work piece setting
Manual or Auto loading (Cassette to Cassette)
Within 2 minutes for 4inch wafer
Target substrate and wafer
SiC waferAGaN waferALT waferAfilm deposited waferA Transparent substrate and wafer