Automated Optical Inspection／wafer surface inspection system／YGK Corporation

New designed detection units which are cross setting with dual 355nm (UV) laser.
The dual detector contributes enhanced detection for a slight scratch generated directional light scattered compared with conventional particle inspection system.
And also, 355nm laser is effective for isolated detection of SiC surface only.
Inspection time is within 5min for 4inch SiC wafer.

　　　　
　　　　dual laser units　　　　　　　　　　　　　　　　　　　Inspection result image

　

Transparent wafer, silicon wafer or LT wafer can be measured by YPI-MX-θDC. Maximum sensitivity is 0.1μm.

MAP result for LT wafer

Approx 2minutes inspection time for 4inch LT wafer.

Specifications

Scanning method

Rotation or XY scanning with dual laser units

Work piece setting

Manual or Auto loading (Cassette to Cassette)

Electric consumption

AC100V/200V 30A

Maximum sensitivity

0.1μm

Reproducibility

σ／Ｘ≦１０％

Inspection time

Within 2 minutes for 4inch wafer

Target substrate and wafer

SiC wafer、GaN wafer、LT wafer、film deposited wafer、
Transparent substrate and wafer

Appearance Dimension

Ｗ９００ｍｍ×Ｄ１,０００ｍｍ×Ｈ１,７５７ｍｍ（Manual）
Ｗ１,５３０ｍｍ×Ｄ１,２００ｍｍ×Ｈ１,７１５ｍｍ（Auto loading）

Weight

Approx.５００ｋｇ（Manual）
Approx.１０００ｋｇ（Auto loading）